• OTHER

  • Newest
  • Most reviews

Memory ICs

ModelDescriptionBrandLeadingConditionPriceAction
Memory ICs
FM25H20-DGTR
The FM25H20-DGTR parts are 2Mb Serial 3V F-RAM Memory, manufactured by CYPRESS are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values ​​of electronic parts from the world's leading manufacturers. The FM25H20-DGTR components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the FM25H20-DGTR Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.The FM25H20-DG is IC FRAM 2MBIT 40MHZ 8TDFN, that includes F-RAM? Series, they are designed to operate with a Tube Packaging, Package Case is shown on datasheet note for use in a 8-WDFN Exposed Pad, it has an Operating Temperature range of -40°C ~ 85°C (TA), Interface is designed to work in SPI Serial, as well as the 2.7 V ~ 3.6 V Voltage Supply, the device can also be used as 8-TDFN (5x6) Supplier Device Package. In addition, the Memory Size is 2M (256K x 8), the device is offered in FRAM (Ferroelectric RAM) Memory Type, the device has a 40MHz of Speed, and Format Memory is RAM.FM25F01-SO-U-G with user guide manufactured by FM. The FM25F01-SO-U-G is available in SOP-8 Package, is part of the IC Chips.FM25H20 with circuit diagram manufactured by RamTRON. The FM25H20 is available in QFN Package, is part of the Memory.
OTHERIn StockNew Sealed Under Guarantee
FM24CL04B-GTR
DescriptionThe FM24CL04 is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.Unlike serial EEPROMs, the FM24CL04 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The next bus cycle may commence immediately.These capabilities make the FM24CL04 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.The FM24CL04 provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The FM24CL04 is available in an industry standard 8-pin package using a two-wire protocol. The specifications are guaranteed over an industrial temperature range of -40°C to +85°C.Features4K bit Ferroelectric Nonvolatile RAM• Organized as 512 x 8 bits• Unlimited Read/Writes• 10 Year Data Retention• NoDelay™ Writes• Advanced High-Reliability Ferroelectric ProcessFast Two-wire Serial Interface• Up to 1 MHz maximum bus frequency• Direct hardware replacement for EEPROMLow Power Operation• 2.7V to 3.65V operation• 75 µA Active Current (100 kHz) @ 3V• 1 µA Standby CurrentIndustry Standard Configuration• Industrial Temperature -40° C to +85° C• 8-pin SOIC
OTHERIn StockNew Sealed Under Guarantee
FM25CL64B-GATR
General DescriptionThe FM25C040U is a 4K (4,096) bit serial interface CMOS EEPROM (Electrically Erasable Programmable Read-Only Memory). This device fully conforms to the SPI 4-wire protocol which uses Chip Select (/CS), Clock (SCK), Data-in (SI) and Data out (SO) pins to synchronously control data transfer between the SPI microcontroller and the EEPROM. In addition, the serial interface allows a minimal pin count, packaging designed to simplify PC board layout requirements and offers the designer a variety of low voltage and low power options.Features■Sequential read of entire array■4 byte "Page write" mode to minimize total write time per byte■/WP pin and BLOCK WRITE protection to prevent inadvert ent programming as well as programming ENABLE and DISABLE opcodes.■/HOLD pin to suspend data transfer■Typical 1µA standby current (ISB) for "L" devices and 0.1µA standby current for "LZ" devices.■Endurance: Up to 1,000,000 data changes■Data retention greater than 40 yearsFunctions■SPI MODE 0 interface■4,096 bits organized as 512 x 8■Extended 2.7V to 5.5V operating voltage■2.1 MHz operation @ 4.5V - 5.5V■Self-timed programming cycle■"Programming complete" indicated by STATUS REGISTER polling■/WP pin and BLOCK WRITE protection
OTHERIn StockNew Sealed Under Guarantee
FM24V01-GTR
The FM24V01-GTR parts are 128Kb Serial 3V F-RAM Memory, manufactured by CYPRESS are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values ​​of electronic parts from the world's leading manufacturers. The FM24V01-GTR components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the FM24V01-GTR Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.The FM24V01A-G is IC FRAM 128KBIT 3.4MHZ 8SOIC, that includes F-RAM? Series, they are designed to operate with a Tube Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.019048 oz, that offers Mounting Style features such as SMD/SMT, it has an Operating Temperature Range range of - 40 C to + 85 C, as well as the 8-SOIC (0.154", 3.90mm Width) Package Case, it has an Operating Temperature range of -40°C ~ 85°C (TA). In addition, the Interface is I2C, 2-Wire Serial, the device is offered in 2 V ~ 3.6 V Voltage Supply, the device has a 8-SOIC of Supplier Device Package, and Memory Size is 128K (16K x 8), and the Memory Type is FRAM (Ferroelectric RAM), and Speed is 3.4MHz, and the Format Memory is RAM, it has an Maximum Operating Temperature range of + 85 C, it has an Minimum Operating Temperature range of - 40 C, and Interface Type is I2C, and the Organization is 16 kbit x 8, and Supply Voltage Max is 3.6 V, and the Supply Voltage Min is 2 V.The FM24V01-G is IC FRAM 128KBIT 3.4MHZ 8SOIC, that includes 2 V ~ 3.6 V Voltage Supply, they are designed to operate with a 0.019048 oz Unit Weight, Supplier Device Package is shown on datasheet note for use in a 8-SOIC, that offers Speed features such as 3.4MHz, Series is designed to work in F-RAM?, as well as the Tube Packaging, the device can also be used as 8-SOIC (0.154", 3.90mm Width) Package Case. In addition, the Organization is 16 k x 8, it has an Operating Temperature Range range of - 40 C to + 85 C, it has an Operating Temperature range of -40°C ~ 85°C (TA), and Operating Supply Voltage is 2 V to 3.6 V, and the Mounting Style is SMD/SMT, and Memory Type is FRAM (Ferroelectric RAM), and the Memory Size is 128K (16K x 8), and Interface Type is 2-wire, and the Interface is I2C, 2-Wire Serial, and Format Memory is RAM.The FM24V01A-GTR is IC FRAM 128KBIT 3.4MHZ 8SOIC, that includes RAM Format Memory, they are designed to operate with a I2C, 2-Wire Serial Interface, Memory Size is shown on datasheet note for use in a 128K (16K x 8), that offers Memory Type features such as FRAM (Ferroelectric RAM), it has an Operating Temperature range of -40°C ~ 85°C (TA), as well as the 8-SOIC (0.154", 3.90mm Width) Package Case, the device can also be used as Tape & Reel (TR) Alternate Packaging Packaging. In addition, the Series is F-RAM?, the device is offered in 3.4MHz Speed, the device has a 8-SOIC of Supplier Device Package, and Voltage Supply is 2 V ~ 3.6 V.
OTHERIn StockNew Sealed Under Guarantee
S34ML01G100BHI000
The S34ML01G100BHI000 parts manufactured by CYPRESS are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values ​​of electronic parts from the world's leading manufacturers. The S34ML01G100BHI000 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the S34ML01G100BHI000 Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.S34ML01G100BHB000 with pin details, that includes ML-1 Series, they are designed to operate with a Tray Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, it has an Operating Temperature Range range of - 40 C to + 105 C, Package Case is designed to work in 63-VFBGA, it has an Operating Temperature range of -40°C ~ 105°C (TA), the device can also be used as Parallel Interface. In addition, the Voltage Supply is 2.7 V ~ 3.6 V, the device is offered in 63-BGA (11x9) Supplier Device Package, the device has a 1G (128M x 8) of Memory Size, and Memory Type is FLASH - NAND, and the Speed is 25ns, and Architecture is Multiplane, and the Format Memory is FLASH, and Interface Type is Parallel, and the Organization is 128 M x 8, and Supply Current Max is 30 mA, and the Data Bus Width is 8 bit, and Supply Voltage Max is 3.6 V, and the Supply Voltage Min is 2.7 V, and Timing Type is Asynchronous.S34ML01G100BHB003 with user guide, that includes 2.7 V ~ 3.6 V Voltage Supply, they are designed to operate with a 63-BGA (11x9) Supplier Device Package, Speed is shown on datasheet note for use in a 25ns, that offers Series features such as ML-1, Packaging is designed to work in Tape & Reel (TR) Alternate Packaging, as well as the 63-VFBGA Package Case, it has an Operating Temperature range of -40°C ~ 105°C (TA). In addition, the Memory Type is FLASH - NAND, the device is offered in 1G (128M x 8) Memory Size, the device has a Parallel of Interface, and Format Memory is FLASH.S34ML01G100BHA003 with circuit diagram, that includes FLASH Format Memory, they are designed to operate with a Parallel Interface, Memory Size is shown on datasheet note for use in a 1G (128M x 8), that offers Memory Type features such as FLASH - NAND, it has an Operating Temperature range of -40°C ~ 85°C (TA), as well as the 63-VFBGA Package Case, the device can also be used as Tape & Reel (TR) Alternate Packaging Packaging. In addition, the Series is ML-1, the device is offered in 25ns Speed, the device has a 63-BGA (11x9) of Supplier Device Package, and Voltage Supply is 2.7 V ~ 3.6 V.
OTHERIn StockNew Sealed Under Guarantee
CY7C1041DV33-10BVXI
OTHERIn StockNew Sealed Under Guarantee
CY7C1049B-20VC
OTHERIn StockNew Sealed Under Guarantee
CY62128EV30LL-45ZAXI
Functional Description[1]The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.Features• Very high speed: 45 ns• Temperature ranges–— Industrial: –40°C to +85°C— Automotive-A: –40°C to +85°C— Automotive-E: –40°C to +125°C• Wide voltage range: 2.20V – 3.60V• Pin compatible with CY62128DV30• Ultra low standby power— Typical standby current: 1 µA— Maximum standby current: 4 µA• Ultra low active power— Typical active current: 1.3 mA @ f = 1 MHz• Easy memory expansion with CE1, CE2 and OE features• Automatic power down when deselected• CMOS for optimum speed and power• Offered in Pb-free 32-pin SOIC, 32-pin TSOP I, and 32-pin STSOP packages
OTHERIn StockNew Sealed Under Guarantee
CY14B101I-SFXI
OverviewThe Cypress CY14C101I/CY14B101I/CY14E101I combines a 1-Mbit nvSRAM[1] with a full-featured RTC in a monolithic integrated circuit with serial I2C interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while the QuantumTrap cells provide highly reliable nonvolatile storage of data. Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation). The STORE and RECALL operations can also be initiated by the user through I2C commands.Features■ 1-Mbit nonvolatile static random access memory (nvSRAM)❐ Internally organized as 128 K × 8❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by using I2C command (Software STORE) or HSB pin (Hardware STORE)❐ RECALL to SRAM initiated on power-up (Power-Up RECALL) or by I2C command (Software RECALL)❐ Automatic STORE on power-down with a small capacitor■ High reliability❐ Infinite read, write, and RECALL cycles❐ 1 million STORE cycles to QuantumTrap❐ Data retention: 20 years at 85C■ Real Time Clock (RTC)❐ Full-featured RTC❐ Watchdog timer❐ Clock alarm with programmable interrupts❐ Backup power fail indication❐ Square wave output with programmable frequency (1 Hz, 512 Hz, 4096 Hz, 32.768 kHz)❐ Capacitor or battery backup for RTC❐ Backup current of 0.45 µA (typical)■ High-speed I2C interface❐ Industry standard 100 kHz and 400 kHz speed❐ Fast mode Plus: 1 MHz speed❐ High speed: 3.4 MHz❐ Zero cycle delay reads and writes■ Write protection❐ Hardware protection using Write Protect (WP) pin❐ Software block protection for 1/4, 1/2, or entire array■ I2C access to special functions❐ Nonvolatile STORE/RECALL❐ 8-byte serial number❐ Manufacturer ID and Product ID❐ Sleep mode■ Low power consumption❐ Average active current of 1 mA at 3.4 MHz operation❐ Average standby mode current of 250 µA❐ Sleep mode current of 8 µA■ Industry standard configurations❐ Operating voltages:• CY14C101I: VCC = 2.4 V to 2.6 V• CY14B101I: VCC = 2.7 V to 3.6 V• CY14E101I: VCC = 4.5 V to 5.5 V❐ Industrial temperature❐ 16-pin small outline integrated circuit (SOIC) package❐ Restriction of hazardous substances (RoHS) compliant
OTHERIn StockNew Sealed Under Guarantee
S25FL032P0XMFI001
General DescriptionThe S25FL032P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 uniform 64 KB sectors with the two (Top or Bottom) 64 KB sectors further split up into thirty-two 4KB sub sectors. The S25FL032P device is fully backward compatible with the S25FL032A device.The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be programmed in-system with the standard system 3.0-volt VCC supply.Distinctive CharacteristicsArchitectural Advantages■ Single power supply operation– Full voltage range: 2.7 to 3.6V read and write operations■ Memory architecture– Uniform 64 KB sectors– Top or bottom parameter block (Two 64-KB sectors (top orbottom) broken down into sixteen 4-KB sub-sectors each)– 256-byte page size– Backward compatible with the S25FL032A device■ Program– Page Program (up to 256 bytes) in 1.5 ms (typical)– Program operations are on a page by page basis– Accelerated programming mode via 9V W#/ACC pin– Quad Page Programming■ Erase– Bulk erase function– Sector erase (SE) command (D8h) for 64 KB sectors– Sub-sector erase (P4E) command (20h) for 4 KB sectors– Sub-sector erase (P8E) command (40h) for 8 KB sectors■ Cycling endurance– 100,000 cycles per sector typical■ Data retention– 20 years typical■ Device ID– JEDEC standard two-byte electronic signature– RES command one-byte electronic signature for backwardcompatibility■ One time programmable (OTP) area for permanent, secureidentification; can be programmed and locked at the factoryor by the customer■ CFI (Common Flash Interface) compliant: allows host systemto identify and accommodate multiple flash devices■ Process technology– Manufactured on 0.09 µm MirrorBit® process technology■ Package option– Industry Standard Pinouts– 8-pin SO package (208 mils)– 16-pin SO package (300 mils)– 8-contact USON package (5 x 6 mm)– 8-contact WSON package (6 x 8 mm)– 24-ball BGA 6 x 8 mm package, 5 x 5 pin configuration– 24-ball BGA 6 x 8 mm package, 6 x 4 pin configurationPerformance Characteristics■ Speed– Normal READ (Serial): 40 MHz clock rate– FAST_READ (Serial): 104 MHz clock rate (maximum)– DUAL I/O FAST_READ: 80 MHz clock rate or20 MB/s effective data rate– QUAD I/O FAST_READ: 80 MHz clock rate or40 MB/s effective data rate■ Power saving standby mode– Standby Mode 80 µA (typical)– Deep Power-Down Mode 3 µA (typical)Memory Protection Features■ Memory protection– W#/ACC pin works in conjunction with Status Register Bits toprotect specified memory areas– Status Register Block Protection bits (BP2, BP1, BP0) in status
OTHERIn StockNew Sealed Under Guarantee
0.474985s