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      FETs - Single

      FETs - Single
      ModelDescriptionBrandLeadingConditionPriceAction
      FETs - Single
      VN2222LL-G
      General DescriptionThis enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coeffcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Features► Free from secondary breakdown► Low power drive requirement► Ease of paralleling► Low CISS and fast switching speeds► Excellent thermal stability► Integral source-drain diode► High input impedance and high gainApplications► Motor controls► Converters► Amplifers► Switches► Power supply circuits► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
      		OTHERIn StockNew Sealed Under Guarantee
      VP2206N2
      Advanced DMOS TechnologyThese enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.Features❏ Free from secondary breakdown❏ Low power drive requirement❏ Ease of paralleling❏ Low CISS and fast switching speeds❏ Excellent thermal stability❏ Integral Source-Drain diode❏ High input impedance and high gain❏ Complementary N- and P-channel devicesApplications❏ Motor controls❏ Converters❏ Amplifiers❏ Switches❏ Power supply circuits❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
      		OTHERIn StockNew Sealed Under Guarantee
      0.484847s