| TrenchFETR |
| | The SI2305 parts manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The SI2305 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the SI2305 Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.Si2304DS-T1-E3/A4 with pin details manufactured by 30000VISHAY. The Si2304DS-T1-E3/A4 is available in SOT23-3 Package, is part of the IC Chips.SI2304DS-T1-GE3 with user guide manufactured by VISHAY. The SI2304DS-T1-GE3 is available in SOT-23 Package, is part of the IC Chips.SI2304-TP with circuit diagram manufactured by MCC. The SI2304-TP is available in SOT-23 Package, is part of the IC Chips, N-Channel 30V 2.5A (Ta) 250mW (Ta) Surface Mount SOT-23, Trans MOSFET N-CH 30V 2.5A 3-Pin SOT-23 T/R. | OTHER | In Stock | New Sealed Under Guarantee | | |
| | The SI7615DN-T1-GE3 parts manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The SI7615DN-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the SI7615DN-T1-GE3 Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.The SI7613DN-T1-GE3 is MOSFET P-CH 20V 35A 1212-8 PPAK, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI7613DN-GE3, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in PowerPAKR 1212-8, as well as the Si Technology, it has an Operating Temperature range of -50°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a PowerPAKR 1212-8 of Supplier Device Package, and Configuration is Single Quad Drain Triple Source, and the FET Type is MOSFET P-Channel, Metal Oxide, and Power Max is 52.1W, and the Transistor Type is 1 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 2620pF @ 10V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 35A (Tc), and Rds On Max Id Vgs is 8.7 mOhm @ 17A, 10V, and the Vgs th Max Id is 2.2V @ 250μA, and Gate Charge Qg Vgs is 87nC @ 10V, and the Pd Power Dissipation is 3.8 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 13 ns 9 ns, and the Rise Time is 40 ns 7 ns, and Vgs Gate Source Voltage is 16 V, and the Id Continuous Drain Current is 17 A, and Vds Drain Source Breakdown Voltage is - 20 V, and the Rds On Drain Source Resistance is 8.7 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 41 ns 42 ns, and Typical Turn On Delay Time is 43 ns 14 ns, and the Channel Mode is Enhancement.The SI7615ADN-T1-GE3 is MOSFET P-CH 20V 35A 1212-8S, that includes 1.5V @ 250μA Vgs th Max Id, they are designed to operate with a - 20 V Vds Drain Source Breakdown Voltage, Transistor Type is shown on datasheet note for use in a 1 P-Channel, that offers Transistor Polarity features such as P-Channel, Technology is designed to work in Si, as well as the PowerPAKR 1212-8 Supplier Device Package, the device can also be used as TrenchFETR Series. In addition, the Rds On Max Id Vgs is 4.4 mOhm @ 20A, 10V, the device is offered in 4.4 mOhms Rds On Drain Source Resistance, the device has a 59 nC of Qg Gate Charge, and Power Max is 52W, and the Pd Power Dissipation is 52 W, and Part Aliases is SI7621DN-T1-GE3, and the Packaging is Digi-ReelR Alternate Packaging, and Package Case is PowerPAKR 1212-8, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, and Mounting Type is Surface Mount, and the Input Capacitance Ciss Vds is 5590pF @ 10V, and Id Continuous Drain Current is - 35 A, and the Gate Charge Qg Vgs is 183nC @ 10V, and FET Type is MOSFET P-Channel, Metal Oxide, and the FET Feature is Standard, and Drain to Source Voltage Vdss is 20V, and the Current Continuous Drain Id 25°C is 35A (Tc), and Configuration is Single.SI7615DN-T1 with circuit diagram manufactured by VISHAY. The SI7615DN-T1 is available in QFN8 Package, is part of the IC Chips. | OTHER | In Stock | New Sealed Under Guarantee | | |
| | The SI2301CDS-T1-GE3 parts are Trans MOSFET P-CH 20V 2.3A 3-Pin SOT-23 T/R, manufactured by VISHAY/PLINGSEMI are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The SI2301CDS-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the SI2301CDS-T1-GE3 Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.The SI2301CDS-T1-E3 is MOSFET P-CH 20V 3.1A SOT23-3, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI2301CDS-E3, that offers Unit Weight features such as 0.050717 oz, Mounting Style is designed to work in SMD/SMT, as well as the TO-236-3, SC-59, SOT-23-3 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is SOT-23-3 (TO-236), and the Configuration is Single, and FET Type is MOSFET P-Channel, Metal Oxide, and the Power Max is 1.6W, and Transistor Type is 1 P-Channel, and the Drain to Source Voltage Vdss is 20V, and Input Capacitance Ciss Vds is 405pF @ 10V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 3.1A (Tc), and the Rds On Max Id Vgs is 112 mOhm @ 2.8A, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 10nC @ 4.5V, and Pd Power Dissipation is 860 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 35 ns, and Rise Time is 35 ns, and the Vgs Gate Source Voltage is 8 V, and Id Continuous Drain Current is - 2.3 A, and the Vds Drain Source Breakdown Voltage is - 20 V, and Rds On Drain Source Resistance is 112 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 30 ns, and the Typical Turn On Delay Time is 11 ns, and Channel Mode is Enhancement.SI2301CDS-T1 with user guide manufactured by VISHAY. The SI2301CDS-T1 is available in SOT23 Package, is part of the FETs - Single.Si2301CDS-T1-E3/N1 with circuit diagram manufactured by 30000VISHAY. The Si2301CDS-T1-E3/N1 is available in SOT23-3 Package, is part of the IC Chips. | OTHER | In Stock | New Sealed Under Guarantee | | |
| | The SI2303CDS-T1-GE3 parts are P-Channel 30-V (D-S) MOSFET, manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The SI2303CDS-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the SI2303CDS-T1-GE3 Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.The Si2303CDS-T1-E3 is MOSFET P-CH 30V 2.7A SOT23-3, that includes Reel Packaging, they are designed to operate with a SI2303CDS-E3 Part Aliases, Unit Weight is shown on datasheet note for use in a 0.050717 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOT-23-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 P-Channel Transistor Type, the device has a 1 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 37 ns, and the Rise Time is 37 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 1.9 A, and Vds Drain Source Breakdown Voltage is - 30 V, and the Rds On Drain Source Resistance is 190 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 12 ns, and Typical Turn On Delay Time is 36 ns, and the Channel Mode is Enhancement.SI2303CDS with user guide manufactured by VISHAY. The SI2303CDS is available in SOT23-3 Package, is part of the FETs - Single.SI2303CDS-T1-E3/N3 with circuit diagram manufactured by 30000VISHAY. The SI2303CDS-T1-E3/N3 is available in SOT23-3 Package, is part of the IC Chips. | OTHER | In Stock | New Sealed Under Guarantee | | |
| | The SI2316BDS-T1-GE3 parts manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The SI2316BDS-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the SI2316BDS-T1-GE3 Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.The SI2316BDS-T1-E3 is MOSFET N-CH 30V 4.5A SOT-23, that includes Reel Packaging, they are designed to operate with a SI2316BDS-E3 Part Aliases, Unit Weight is shown on datasheet note for use in a 0.050717 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SOT-23-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 1.25 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 11 ns 65 ns, and the Rise Time is 11 ns 65 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 3.9 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 50 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 12 ns 11 ns, and Typical Turn On Delay Time is 4.5 ns 20 ns, and the Channel Mode is Enhancement.SI2315DS-TI with user guide manufactured by VISHAY. The SI2315DS-TI is available in SOT-23 Package, is part of the IC Chips.SI2316BDS with circuit diagram manufactured by VISHAY. The SI2316BDS is available in SOD23 Package, is part of the FETs - Single. | OTHER | In Stock | New Sealed Under Guarantee | | |
| | | OTHER | In Stock | New Sealed Under Guarantee | | |
| | The SIA421DJ-T1-GE3 parts manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The SIA421DJ-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the SIA421DJ-T1-GE3 Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.SIA417DJ with pin details manufactured by VISHAY. The SIA417DJ is available in SOT-363 Package, is part of the FETs - Single.The SIA417DJ-T1-GE3 is MOSFET P-CH 8V 12A SC70-6 manufactured by VISHAY. The SIA417DJ-T1-GE3 is available in PowerPAK® SC-70-6 Package, is part of the FETs - Single, , and with support for MOSFET P-CH 8V 12A SC70-6, P-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK? SC-70-6 Single, Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R.The SIA419DJ-T1-GE3 is MOSFET P-CH 20V 12A SC70-6 manufactured by VISHAY. The SIA419DJ-T1-GE3 is available in PowerPAK® SC-70-6 Package, is part of the FETs - Single, , and with support for MOSFET P-CH 20V 12A SC70-6, P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK? SC-70-6 Single. | OTHER | In Stock | New Sealed Under Guarantee | | |
| | The SI2333CDS-T1-GE3 parts manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The SI2333CDS-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the SI2333CDS-T1-GE3 Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.The SI2333CDS-T1-E3 is MOSFET P-CH 12V 7.1A SOT23-3, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI2333CDS-E3, that offers Unit Weight features such as 0.050717 oz, Mounting Style is designed to work in SMD/SMT, as well as the TO-236-3, SC-59, SOT-23-3 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is SOT-23-3 (TO-236), and the Configuration is Single, and FET Type is MOSFET P-Channel, Metal Oxide, and the Power Max is 2.5W, and Transistor Type is 1 P-Channel, and the Drain to Source Voltage Vdss is 12V, and Input Capacitance Ciss Vds is 1225pF @ 6V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 7.1A (Tc), and the Rds On Max Id Vgs is 35 mOhm @ 5.1A, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 25nC @ 4.5V, and Pd Power Dissipation is 1.25 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 35 ns, and Rise Time is 35 ns, and the Vgs Gate Source Voltage is 8 V, and Id Continuous Drain Current is 5.1 A, and the Vds Drain Source Breakdown Voltage is - 12 V, and Rds On Drain Source Resistance is 35 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 45 ns, and the Typical Turn On Delay Time is 13 ns, and Channel Mode is Enhancement.SI2333CDS with user guide manufactured by VISHAY. The SI2333CDS is available in SOT23 Package, is part of the FETs - Single.Si2333CDS-T1-E3/O3 with circuit diagram The Si2333CDS-T1-E3/O3 is available in SOT23-3 Package, is part of the IC Chips. | OTHER | In Stock | New Sealed Under Guarantee | | |
| | | OTHER | In Stock | New Sealed Under Guarantee | | |
| | | OTHER | In Stock | New Sealed Under Guarantee | | |
| | | OTHER | In Stock | New Sealed Under Guarantee | | |
| | Single P-Channel 30 V 88 mOhms Surface Mount Power Mosfet - SOT-23-3. P CHANNEL MOSFET, -30V, 2.7A TO-236, FUL; P CHANNEL MOSFET, -30V, 2.7A TO-236, FULL REEL; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.138ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:-3V. MOSFET, P-CH, 30V, 3.5A, SOT23; Transistor Polarity:P Channel; Drain Source Voltage Vds:-30V; On Resistance Rds(on):73mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-3.5A; Power Dissipation Pd:1.1W; Voltage Vgs Max:20V. | OTHER | In Stock | New Sealed Under Guarantee | | |
| | | OTHER | In Stock | New Sealed Under Guarantee | | |
| | | OTHER | In Stock | New Sealed Under Guarantee | | |
| | The SI2312CDS-T1-GE3 parts manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The SI2312CDS-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the SI2312CDS-T1-GE3 Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.The SI2312BDS-T1-GE3 is MOSFET N-CH 20V 3.9A SOT23-3, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI2312BDS-GE3, that offers Unit Weight features such as 0.050717 oz, Mounting Style is designed to work in SMD/SMT, as well as the TrenchFET Tradename, the device can also be used as TO-236-3, SC-59, SOT-23-3 Package Case. In addition, the Technology is Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device has a Surface Mount of Mounting Type, and Number of Channels is 1 Channel, and the Supplier Device Package is SOT-23-3 (TO-236), and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 750mW, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 20V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 3.9A (Ta), and the Rds On Max Id Vgs is 31 mOhm @ 5A, 4.5V, and Vgs th Max Id is 850mV @ 250μA, and the Gate Charge Qg Vgs is 12nC @ 4.5V, and Pd Power Dissipation is 750 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 30 ns, and Rise Time is 30 ns, and the Vgs Gate Source Voltage is 8 V, and Id Continuous Drain Current is 3.9 A, and the Vds Drain Source Breakdown Voltage is 20 V, and Rds On Drain Source Resistance is 31 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 35 ns, and the Typical Turn On Delay Time is 9 ns, and Channel Mode is Enhancement.Si2312CDS with user guide manufactured by Vishay. The Si2312CDS is available in SOT-23 Package, is part of the FETs - Single.SI2312CDS-T1-E3 with circuit diagram manufactured by VISHAY. The SI2312CDS-T1-E3 is available in SOT-23 Package, is part of the IC Chips. | OTHER | In Stock | New Sealed Under Guarantee | | |
| | The SI2302DDS-T1-GE3 parts are Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R, manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The SI2302DDS-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the SI2302DDS-T1-GE3 Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.The SI2302CDS-T1-GE3 is MOSFET N-CH 20V 2.6A SOT23-3, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI2302CDS-GE3, that offers Unit Weight features such as 0.050717 oz, Mounting Style is designed to work in SMD/SMT, as well as the TO-236-3, SC-59, SOT-23-3 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is SOT-23-3 (TO-236), and the Configuration is Single, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 710mW, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 20V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 2.6A (Ta), and Rds On Max Id Vgs is 57 mOhm @ 3.6A, 4.5V, and the Vgs th Max Id is 850mV @ 250μA, and Gate Charge Qg Vgs is 5.5nC @ 4.5V, and the Pd Power Dissipation is 710 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 7 ns, and the Rise Time is 7 ns, and Vgs Gate Source Voltage is 8 V, and the Id Continuous Drain Current is 2.6 A, and Vds Drain Source Breakdown Voltage is 20 V, and the Rds On Drain Source Resistance is 57 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 30 ns, and Typical Turn On Delay Time is 8 ns, and the Channel Mode is Enhancement.Si2302DDS-T1-GE3 with user guide, that includes 0.85 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 8 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 20 V, that offers Unit Weight features such as 0.050717 oz, Typical Turn On Delay Time is designed to work in 8 ns, as well as the 30 ns Typical Turn Off Delay Time, the device can also be used as 1 N-Channel Transistor Type. In addition, the Transistor Polarity is N-Channel, the device is offered in TrenchFET Tradename, the device has a Si of Technology, and Series is SI2302DDS, and the Rise Time is 7 ns, and Rds On Drain Source Resistance is 57 mOhms, and the Qg Gate Charge is 3.5 nC, and Pd Power Dissipation is 710 mW, and the Packaging is Reel, and Package Case is SOT-23-3, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 2.9 A, and Forward Transconductance Min is 13 S, and the Fall Time is 7 ns, and Channel Mode is Enhancement.SI2302COV with circuit diagram manufactured by RICHTEK. The SI2302COV is available in SOT23 Package, is part of the IC Chips.SI2302DC-T1 with EDA / CAD Models manufactured by SILICONIX. The SI2302DC-T1 is available in SOT23 Package, is part of the IC Chips. | OTHER | In Stock | New Sealed Under Guarantee | | |
| | | OTHER | In Stock | New Sealed Under Guarantee | | |
| | | OTHER | In Stock | New Sealed Under Guarantee | | |
| | | OTHER | In Stock | New Sealed Under Guarantee | | |
| | | OTHER | In Stock | New Sealed Under Guarantee | | |
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